Reduces On-Resistance by approximately 24%
TOKYO - Monday, July 22nd 2013 [ME NewsWire]
(BUSINESS WIRE) Toshiba Corporation (TOKYO:6502) today announced that it has launched a new series of high voltage MOSFETs, "πMOS VIII" series, and introduced "TK9J90E" as the initial product of the series. Mass production is scheduled to start in August, 2013.
Optimization of chip design reduces Ron·A (on resistance per area) by approximately 24% compared to a product1 with an equivalent voltage. Reduction of Qg (gate charge) performance by approximately 24% improves turn off time (toff) by approximately 28%.
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Note: 1. Compared to "2SK3878".
For more information about the product, please see the product page. http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1324090_37649.html
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